2N6388G

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Mfr.Part #
2N6388G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
9
In Stock :
9

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
10A
Collector Emitter Breakdown Voltage :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
80V
Base Part Number :
2N6388
Height :
4.82mm
Number of Pins :
3
Mounting Type :
Through Hole
Power - Max :
2W
Package / Case :
TO-220-3
Contact Plating :
Tin
Max Power Dissipation :
2W
Published :
2006
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 3V
Polarity :
NPN
Current - Collector (Ic) (Max) :
10A
Factory Lead Time :
8 Weeks
Supplier Device Package :
TO-220AB
Current - Collector Cutoff (Max) :
1mA
Emitter Base Voltage (VEBO) :
5V
Current Rating :
10A
Lead Free :
Lead Free
Number of Elements :
1
hFE Min :
1000
Min Operating Temperature :
-65°C
Radiation Hardening :
No
Element Configuration :
Single
Max Collector Current :
10A
Operating Temperature :
-65°C~150°C TJ
Width :
10.28mm
Voltage - Collector Emitter Breakdown (Max) :
80V
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Collector Emitter Saturation Voltage :
2V
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN - Darlington
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Weight :
4.535924g
Length :
15.75mm
Collector Emitter Voltage (VCEO) :
80V
Max Operating Temperature :
150°C
Collector Base Voltage (VCBO) :
80V
Packaging :
Tube
Power Dissipation :
65W
REACH SVHC :
No SVHC
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6388G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2N6388, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, 2N6388G pinout, 2N6388G datasheet PDF, 2N6388G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6388G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6388G


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements TO-220-3 Tube Through Hole

2N6388G Overview


In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Maintaining the continuous collector voltage at 10A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 10A volts.

2N6388G Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
the supplier device package of TO-220AB


2N6388G Applications


There are a lot of ON Semiconductor
2N6388G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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