2N6301E3

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

3V @ 80mA, 8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 4A, 3V

Current - Collector Cutoff (Max) :

500μA

Number of Terminals :

2

Mounting Type :

Through Hole

Minimum Operating Temperature :

- 55 C

Transistor Type :

NPN - Darlington

Collector Current-Max (IC) :

8 A

Power - Max :

75 W

Package :

Bulk

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

75 W

DC Current Gain-Min (hFE) :

100

Collector-Emitter Voltage-Max :

80 V

Product Status :

Active

Package / Case :

TO-213AA, TO-66-2

Case Connection :

COLLECTOR

Frequency - Transition :

-

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Package Shape :

Round

Series :

-

Current - Collector (Ic) (Max) :

500 µA

Maximum Operating Temperature :

+ 200 C

JEDEC-95 Code :

TO-213AA

Reach Compliance Code :

Compliant

Polarity/Channel Type :

NPN

Technology :

Si

Surface Mount :

No

Mounting Style :

Through Hole

Transistor Polarity :

NPN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

80 V

JESD-30 Code :

O-MBFM-P2

Number of Elements :

1

Operating Temperature :

-55°C ~ 200°C (TJ)

Terminal Form :

PIN/PEG

Supplier Device Package :

TO-66 (TO-213AA)

Terminal Position :

BOTTOM

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR