2N6301P
- Mfr.Part #
- 2N6301P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 10,119
- In Stock :
- 10,119
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 500μA
- Brand :
- Microchip Technology
- Manufacturer :
- Microchip
- Package / Case :
- TO-213AA, TO-66-2
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-66 (TO-213AA)
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Power - Max :
- 75 W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A, 3V
- Frequency - Transition :
- -
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Series :
- -
- Package :
- Bulk
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 8 A
- Datasheets
- 2N6301P
NPN - Darlington -55°C ~ 200°C (TJ) 500μA TO-213AA, TO-66-2 Through Hole
2N6301P Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A, 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6301P Features
the DC current gain for this device is 750 @ 4A, 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of TO-66 (TO-213AA)
2N6301P Applications
There are a lot of Microchip Technology
2N6301P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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