2N6388

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Mfr.Part #
2N6388
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
22,102
In Stock :
22,102

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Number of Pins :
3
Published :
2006
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Collector Current :
10A
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
80V
Supplier Device Package :
TO-220AB
Power - Max :
2W
Factory Lead Time :
8 Weeks
Width :
10.28mm
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
80V
Max Power Dissipation :
2W
Emitter Base Voltage (VEBO) :
5V
Voltage - Collector Emitter Breakdown (Max) :
80V
Weight :
4.535924g
Packaging :
Tube
Number of Elements :
1
Current - Collector Cutoff (Max) :
1mA
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-65°C~150°C TJ
Base Part Number :
2N6388
Current Rating :
10A
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Power Dissipation :
65W
Max Operating Temperature :
150°C
Element Configuration :
Single
Min Operating Temperature :
-65°C
Length :
15.75mm
hFE Min :
1000
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Height :
4.82mm
Package / Case :
TO-220-3
Max Collector Current :
10A
Collector Emitter Saturation Voltage :
2V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 3V
Collector Emitter Voltage (VCEO) :
80V
Polarity :
NPN
Voltage - Rated DC :
80V
Transistor Type :
NPN - Darlington
Current - Collector (Ic) (Max) :
10A
REACH SVHC :
No SVHC
Datasheets
2N6388
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6388 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:2N6388, Package / Case:TO-220-3, 2N6388 pinout, 2N6388 datasheet PDF, 2N6388 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6388 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6388


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements TO-220-3 Tube Through Hole

2N6388G Overview


In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Maintaining the continuous collector voltage at 10A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 10A volts.

2N6388G Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
the supplier device package of TO-220AB


2N6388G Applications


There are a lot of ON Semiconductor
2N6388G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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