2N6387G

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Mfr.Part #
2N6387G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 10A TO220
Stock
4,312
In Stock :
4,312

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2001
Current Rating :
10A
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Lead Free :
Lead Free
JESD-609 Code :
e3
Width :
4.826mm
Factory Lead Time :
2 Weeks
Polarity :
NPN
Number of Pins :
3
Mount :
Through Hole
Height :
15.748mm
Peak Reflow Temperature (Cel) :
260
Collector Emitter Saturation Voltage :
2V
Max Power Dissipation :
2W
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 3V
Reach Compliance Code :
not_compliant
Max Collector Current :
10A
Pin Count :
3
REACH SVHC :
No SVHC
Transition Frequency :
20MHz
Current - Collector Cutoff (Max) :
1mA
ECCN Code :
EAR99
Package / Case :
TO-220-3
Transistor Type :
NPN - Darlington
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.2616mm
Operating Temperature :
-65°C~150°C TJ
Base Part Number :
2N6387
Weight :
4.535924g
Time@Peak Reflow Temperature-Max (s) :
40
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
AMPLIFIER
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
60V
Collector Emitter Breakdown Voltage :
60V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
hFE Min :
100
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
60V
Pbfree Code :
yes
Packaging :
Tube
Qualification Status :
Not Qualified
Element Configuration :
Single
Mounting Type :
Through Hole
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
60V
Power Dissipation :
2W
Transistor Element Material :
SILICON
Datasheets
2N6387G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6387G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Base Part Number:2N6387, Mounting Type:Through Hole, Number of Terminations:3, 2N6387G pinout, 2N6387G datasheet PDF, 2N6387G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6387G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6387G


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

2N6387G Overview


In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).20MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.

2N6387G Features


the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 20MHz


2N6387G Applications


There are a lot of ON Semiconductor
2N6387G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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