2N6387G
- Mfr.Part #
- 2N6387G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 10A TO220
- Stock
- 4,312
- In Stock :
- 4,312
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2001
- Current Rating :
- 10A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Width :
- 4.826mm
- Factory Lead Time :
- 2 Weeks
- Polarity :
- NPN
- Number of Pins :
- 3
- Mount :
- Through Hole
- Height :
- 15.748mm
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 2V
- Max Power Dissipation :
- 2W
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Reach Compliance Code :
- not_compliant
- Max Collector Current :
- 10A
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 20MHz
- Current - Collector Cutoff (Max) :
- 1mA
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.2616mm
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- 2N6387
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 100
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Datasheets
- 2N6387G

NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6387G Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).20MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
2N6387G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 20MHz
2N6387G Applications
There are a lot of ON Semiconductor
2N6387G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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