2N6338G
- Mfr.Part #
- 2N6338G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 25A TO204
- Stock
- 1,271
- In Stock :
- 1,271
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 100V
- Terminal Form :
- PIN/PEG
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- hFE Min :
- 50
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Pin Count :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10A 2V
- Contact Plating :
- Tin
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Number of Pins :
- 2
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-204AA, TO-3
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Packaging :
- Tray
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 200W
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 2.5A, 25A
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Frequency :
- 40MHz
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 200W
- Collector Emitter Saturation Voltage :
- 1.8V
- Transistor Application :
- SWITCHING
- Current Rating :
- 25A
- Current - Collector Cutoff (Max) :
- 50μA
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 100V
- Transition Frequency :
- 40MHz
- Collector Base Voltage (VCBO) :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 25A
- Base Part Number :
- 2N6338
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Gain Bandwidth Product :
- 40MHz
- Datasheets
- 2N6338G

NPN -65°C~200°C TJ 50μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N6338G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10A 2V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 1.8V @ 2.5A, 25A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.In the part, the transition frequency is 40MHz.A maximum collector current of 25A volts can be achieved.
2N6338G Features
the DC current gain for this device is 30 @ 10A 2V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 2.5A, 25A
the emitter base voltage is kept at 6V
the current rating of this device is 25A
a transition frequency of 40MHz
2N6338G Applications
There are a lot of ON Semiconductor
2N6338G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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