2N6318

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Mfr.Part #
2N6318
Manufacturer
Central Semiconductor
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANSISTOR
Stock
33,286
In Stock :
33,286

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Product :
Power Relays
Product Type :
General Purpose Relays
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
-
Qualification Status :
Not Qualified
Terminal Finish :
TIN LEAD
Terminal Position :
BOTTOM
Pbfree Code :
No
Transistor Element Material :
SILICON
Manufacturer :
TE Connectivity
JESD-609 Code :
e0
Subcategory :
Relays
Number of Terminals :
2
Product Status :
Active
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
80 V
Current - Collector (Ic) (Max) :
2 mA
JEDEC-95 Code :
TO-66
Current - Collector Cutoff (Max) :
2mA
Surface Mount :
No
Terminal Form :
PIN/PEG
Frequency - Transition :
-
Mounting Type :
Through Hole
Package / Case :
TO-213AA, TO-66-2
Brand :
TE Connectivity
Vce Saturation (Max) @ Ib, Ic :
2V @ 1.75A, 7A
RoHS :
N
Polarity/Channel Type :
PNP
Package :
Bulk
HTS Code :
8541.29.00.95
Package Shape :
Round
Operating Temperature :
-65°C ~ 200°C (TJ)
JESD-30 Code :
O-MBFM-P2
Product Category :
General Purpose Relays
DC Current Gain-Min (hFE) :
20
Collector-Emitter Voltage-Max :
80 V
Supplier Device Package :
TO-66 (TO-213AA)
Collector Current-Max (IC) :
7 A
Power - Max :
90 W
Reach Compliance Code :
Unknown
DC Current Gain (hFE) (Min) @ Ic, Vce :
35 @ 500mA, 4V
Datasheets
2N6318
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor 2N6318 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-213AA, TO-66-2, Operating Temperature:-65°C ~ 200°C (TJ), 2N6318 pinout, 2N6318 datasheet PDF, 2N6318 amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor 2N6318 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) 2mA SILICON PNP TO-213AA, TO-66-2 Through Hole

2N6318 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 500mA, 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 1.75A, 7A.TO-66 (TO-213AA) is the supplier device package for this product.In the 80 V setting, the maximum collector-emitter voltage is set.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.

2N6318 Features


the DC current gain for this device is 35 @ 500mA, 4V
the vce saturation(Max) is 2V @ 1.75A, 7A
the supplier device package of TO-66 (TO-213AA)


2N6318 Applications


There are a lot of Microchip
2N6318 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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