2N6317

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

60V

Max Collector Current :

7A

JESD-609 Code :

e0

Power - Max :

90W

Collector Emitter Voltage (VCEO) :

2V

Vce Saturation (Max) @ Ib, Ic :

2V @ 1.75A, 7A

JESD-30 Code :

O-MBFM-P2

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

ECCN Code :

EAR99

Packaging :

Bulk

Current - Collector Cutoff (Max) :

500μA

Number of Terminations :

2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-213AA, TO-66-2

Mounting Type :

Through Hole

Terminal Form :

PIN/PEG

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Polarity/Channel Type :

PNP

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Published :

2007

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 2.5A 4V

HTS Code :

8541.29.00.95

Terminal Position :

BOTTOM

Contact Plating :

Lead, Tin

Factory Lead Time :

12 Weeks

Transistor Type :

PNP

Operating Temperature :

-65°C~200°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

Max Power Dissipation :

90W