2N6128

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

67 W

JEDEC-95 Code :

TO-61

Collector-Emitter Voltage-Max :

80 V

Current - Collector Cutoff (Max) :

-

Configuration :

Single

Current - Collector (Ic) (Max) :

10 A

Mounting Type :

Stud Mount

Surface Mount :

No

Case Connection :

Isolated

Package :

Bulk

Product Type :

BJTs - Bipolar Transistors

Product Status :

Active

Polarity/Channel Type :

NPN

Technology :

Si

Vce Saturation (Max) @ Ib, Ic :

900mV @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max) :

80 V

Transistor Element Material :

SILICON

Power - Max :

67 W

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5A, 5V

Subcategory :

Transistors

Operating Temperature :

-

Package / Case :

TO-211MA, TO-210AC, TO-61-4, Stud

Terminal Form :

Solder Lug

DC Current Gain-Min (hFE) :

30

JESD-30 Code :

O-MUPM-D3

Brand :

Microchip Technology

Series :

-

Transistor Type :

NPN

Terminal Position :

UPPER

Manufacturer :

Microchip

VCEsat-Max :

0.9 V

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Frequency - Transition :

50MHz

Product Category :

Bipolar Transistors - BJT

Supplier Device Package :

TO-61

Number of Terminals :

3

Collector Current-Max (IC) :

10 A

Package Shape :

Round

Number of Elements :

1