2N5885G
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- Mfr.Part #
- 2N5885G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 25A TO204
- Stock
- 19,508
- In Stock ：
- 19,508
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current Rating :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- PIN/PEG
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 10A 4V
- Transistor Type :
- NPN
- Packaging :
- Tray
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 4MHz
- Length :
- 39.37mm
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1V
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 2mA
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 200W
- Pbfree Code :
- yes
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 8.51mm
- hFE Min :
- 20
- Radiation Hardening :
- No
- Width :
- 26.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 25A
- Frequency :
- 4MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 2
- Factory Lead Time :
- 2 Weeks
- Gain Bandwidth Product :
- 4MHz
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 6.25A, 25A
- JESD-609 Code :
- e3
- Base Part Number :
- 2N5885
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Power Dissipation :
- 200W
- Package / Case :
- TO-204AA, TO-3
- Datasheets
- 2N5885G
NPN -65°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N5885G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 10A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 6.25A, 25A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
2N5885G Features
the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 4MHz
2N5885G Applications
There are a lot of ON Semiconductor
2N5885G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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