2N5830_D26Z
- Mfr.Part #
- 2N5830_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.2A TO92-3
- Stock
- 34,310
- In Stock :
- 34,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Transistor Type :
- NPN
- Power - Max :
- 625mW
- Current - Collector (Ic) (Max) :
- 200mA
- Base Part Number :
- 2N5830
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N5830_D26Z

NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5830_D26Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 5mA, 50mA.Device displays Collector Emitter Breakdown (100V maximal voltage).
2N5830_D26Z Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
2N5830_D26Z Applications
There are a lot of ON Semiconductor
2N5830_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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