2N5830

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Mfr.Part #
2N5830
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 100V 0.2A TO92-3
Stock
9,314
In Stock :
9,314

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
Not Applicable
Packaging :
Bulk
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
JESD-30 Code :
O-PBCY-T3
Number of Elements :
1
JESD-609 Code :
e1
Current - Collector (Ic) (Max) :
200mA
Terminal Finish :
TIN SILVER COPPER
Power - Max :
625mW
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
50nA ICBO
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
100V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Transistor Element Material :
SILICON
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Configuration :
Single
Terminal Position :
BOTTOM
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Qualification Status :
COMMERCIAL
Datasheets
2N5830
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5830 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Mounting Type:Through Hole, 2N5830 pinout, 2N5830 datasheet PDF, 2N5830 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5830 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5830


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N5830 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 10mA 5V.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 100V maximal voltage - Collector Emitter Breakdown.

2N5830 Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA


2N5830 Applications


There are a lot of Rochester Electronics, LLC
2N5830 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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