2N5884G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

4MHz

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V

Frequency :

4MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10A 4V

Emitter Base Voltage (VEBO) :

5V

Length :

39.37mm

Transistor Application :

SWITCHING

Width :

8.509mm

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

1V

Number of Terminations :

2

Transistor Element Material :

SILICON

Voltage - Rated DC :

-80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Height :

26.67mm

Vce Saturation (Max) @ Ib, Ic :

4V @ 6.25A, 25A

Number of Elements :

1

Surface Mount :

No

Packaging :

Tray

Contact Plating :

Tin

Gain Bandwidth Product :

4MHz

Mounting Type :

Through Hole

Published :

2006

Number of Pins :

2

Power Dissipation :

200W

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Max Power Dissipation :

200W

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Terminal Form :

PIN/PEG

Polarity/Channel Type :

PNP

Max Collector Current :

25A

JESD-609 Code :

e3

Operating Temperature :

-65°C~200°C TJ

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

80V

Lead Free :

Lead Free

hFE Min :

20

Current - Collector Cutoff (Max) :

2mA

Base Part Number :

2N5884

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Transistor Type :

PNP

Package / Case :

TO-204AA, TO-3

Terminal Position :

BOTTOM

Pin Count :

2

Peak Reflow Temperature (Cel) :

260

Current Rating :

-25A