2N5883G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

Base Part Number :

2N5883

Vce Saturation (Max) @ Ib, Ic :

4V @ 6.25A, 25A

Frequency :

4MHz

Width :

6.35mm

Transition Frequency :

4MHz

Factory Lead Time :

2 Weeks

Max Power Dissipation :

200W

Max Collector Current :

25A

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Pbfree Code :

yes

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

1V

Current Rating :

25A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Pin Count :

2

Published :

2005

Collector Emitter Breakdown Voltage :

60V

Radiation Hardening :

No

Number of Terminations :

2

Package / Case :

TO-204AA, TO-3

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-60V

Collector Base Voltage (VCBO) :

60V

Number of Elements :

1

Power Dissipation :

200W

Contact Plating :

Tin

Terminal Form :

PIN/PEG

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10A 4V

Gain Bandwidth Product :

4MHz

Mounting Type :

Through Hole

Packaging :

Tray

Terminal Position :

BOTTOM

Number of Pins :

2

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

JESD-609 Code :

e3

hFE Min :

20

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Operating Temperature :

-65°C~200°C TJ

Element Configuration :

Single

Current - Collector Cutoff (Max) :

2mA

Length :

31.75mm