2N5639RLRAG
- Mfr.Part #
- 2N5639RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- JFET N-CH 35V 0.31W TO92
- Stock
- 47,070
- In Stock :
- 47,070
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - JFETs
- Resistance - RDS(On) :
- 60Ohm
- Voltage - Rated DC :
- 30V
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 10mA
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 25mA @ 20V
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Published :
- 2006
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Max Power Dissipation :
- 310mW
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 12V VGS
- FET Type :
- N-Channel
- Power - Max :
- 310mW
- Feedback Cap-Max (Crss) :
- 4 pF
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- 2N5639
- Pbfree Code :
- yes
- Operating Mode :
- Depletion Mode
- Operating Temperature :
- -65°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 35V
- Drain-source On Resistance-Max :
- 60Ohm
- Mount :
- Through Hole
- FET Technology :
- JUNCTION
- Transistor Application :
- SWITCHING
- Datasheets
- 2N5639RLRAG

2N5639RLRAG datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at
2N5639RLRAG Description
The 2N5639RLRAG is a JFET Chopper Transistor with N?Channel ? Depletion. A simple form of the field-effect transistor is the junction-gate field-effect transistor (JFET). JFETs are three-terminal semiconductor devices that can be employed as resistors, switches, or amplifier building blocks.
JFETs are purely voltage-controlled and do not require a biasing current, in contrast to bipolar junction transistors. Between the source and drain terminals, a semiconducting channel conducts an electrical charge. The channel is pinched, causing the electric current to be hindered or turned off entirely, by supplying a reverse bias voltage to a gate terminal. When there is no voltage between the source and gate terminals of a JFET, it is typically conducting.
2N5639RLRAG Features
-
Fast Switching Characteristics ? tr = 5.0 ns (Max) (2N5638)
-
Pb?Free Packages are Available*
-
Low Drain?Source “ON” Resistance: RDS(on) = 60 for 2N5639
-
Low Reverse Transfer Capacitance ? Crss = 4.0 pF (Max) @ f = 1.0 MHz
2N5639RLRAG Applications
-
As a switch
-
As an amplifier
-
As a chopper
-
As a buffer
-
As voltage controlled resistors in the operational amplifiers
-
In cascade amplifier and in RF amplifiers
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