2N5639G

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Current Rating :

10mA

HTS Code :

8541.21.00.95

Feedback Cap-Max (Crss) :

4 pF

Pbfree Code :

yes

Pin Count :

3

Max Power Dissipation :

310mW

Element Configuration :

Single

Qualification Status :

Not Qualified

Current - Drain (Idss) @ Vds (Vgs=0) :

25mA @ 20V

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e1

Power - Max :

310mW

Transistor Element Material :

SILICON

Operating Mode :

Depletion Mode

Packaging :

Bulk

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate to Source Voltage (Vgs) :

35V

Voltage - Rated DC :

30V

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Published :

2006

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

60Ohm

Mounting Type :

Through Hole

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

RoHS Compliant

Resistance - RDS(On) :

60Ohm

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 12V VGS

Base Part Number :

2N5639

FET Technology :

JUNCTION

Mount :

Through Hole

FET Type :

N-Channel