2N5639

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - JFETs

Operating Mode :

Depletion Mode

FET Technology :

JUNCTION

Breakdown Voltage :

-30V

Max Power Dissipation :

310mW

RoHS Status :

Non-RoHS Compliant

Lead Free :

Lead Free

Resistance - RDS(On) :

60Ohm

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Current - Drain (Idss) @ Vds (Vgs=0) :

25mA @ 20V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Voltage - Breakdown (V(BR)GSS) :

35V

Peak Reflow Temperature (Cel) :

240

Packaging :

Bulk

Published :

2003

Number of Terminations :

3

Base Part Number :

2N5639

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

No

Element Configuration :

Single

Lifecycle Status :

OBSOLETE (Last Updated: 2 days ago)

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Reach Compliance Code :

not_compliant

JESD-609 Code :

e0

Feedback Cap-Max (Crss) :

4 pF

Weight :

201mg

Number of Pins :

3

HTS Code :

8541.21.00.95

Mount :

Through Hole

Continuous Drain Current (ID) :

25mA

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 12V VGS

Gate to Source Voltage (Vgs) :

-30V

Power Dissipation :

625mW

Transistor Application :

SWITCHING

Current Rating :

10mA

Pin Count :

3

Number of Elements :

1

FET Type :

N-Channel

Voltage - Rated DC :

30V

Drain to Source Resistance :

60Ohm