2N5639

Manufacturer :

onsemi

Product Category :

Transistors - JFETs

Power Dissipation :

625mW

Operating Mode :

Depletion Mode

Published :

2003

Number of Terminations :

3

Voltage - Rated DC :

30V

Base Part Number :

2N5639

FET Type :

N-Channel

Voltage - Breakdown (V(BR)GSS) :

35V

Drain to Source Resistance :

60Ohm

Operating Temperature :

-65°C~150°C TJ

JESD-609 Code :

e0

Number of Elements :

1

Feedback Cap-Max (Crss) :

4 pF

Reach Compliance Code :

not_compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Qualification Status :

Not Qualified

Mount :

Through Hole

FET Technology :

JUNCTION

Pbfree Code :

No

Drain to Source Breakdown Voltage :

30V

Current - Drain (Idss) @ Vds (Vgs=0) :

25mA @ 20V

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

SWITCHING

Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

10pF @ 12V VGS

Number of Pins :

3

ECCN Code :

EAR99

Pin Count :

3

Resistance - RDS(On) :

60Ohm

Packaging :

Bulk

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mounting Type :

Through Hole

Max Power Dissipation :

310mW

Gate to Source Voltage (Vgs) :

-30V

Lifecycle Status :

OBSOLETE (Last Updated: 2 days ago)

Weight :

201mg

Terminal Position :

BOTTOM

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Current Rating :

10mA

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

25mA

Peak Reflow Temperature (Cel) :

240

RoHS Status :

Non-RoHS Compliant