2N5291
- Mfr.Part #
- 2N5291
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 27,244
- In Stock :
- 27,244
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Series :
- -
- Configuration :
- Single
- JEDEC-95 Code :
- TO-61
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Case Connection :
- Isolated
- Terminal Form :
- Solder Lug
- Manufacturer :
- Microchip
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 5mA
- Terminal Position :
- UPPER
- Package :
- Bulk
- VCEsat-Max :
- 1.5 V
- Current - Collector (Ic) (Max) :
- 10 A
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 100 W
- Product Type :
- BJTs - Bipolar Transistors
- Technology :
- Si
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Stud Mount
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Subcategory :
- Transistors
- Brand :
- Microchip Technology
- Collector Current-Max (IC) :
- 10 A
- Transistor Polarity :
- PNP
- Frequency - Transition :
- -
- Number of Terminals :
- 3
- ECCN Code :
- EAR99
- Collector-Emitter Voltage-Max :
- 100 V
- DC Current Gain-Min (hFE) :
- 70
- Current - Collector Cutoff (Max) :
- -
- Supplier Device Package :
- TO-61
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power - Max :
- 116 W
- Product Category :
- Bipolar Transistors - BJT
- JESD-30 Code :
- O-MUPM-D3
- Package Shape :
- Round
- Polarity/Channel Type :
- PNP
- Datasheets
- 2N5291
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N5291 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1mA, 5mA.The product comes in the supplier device package of TO-61.There is a setting of 100 V for maximal collector-Emitter voltage.A 100 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5291 Features
the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 1mA, 5mA
the supplier device package of TO-61
2N5291 Applications
There are a lot of Microchip Technology
2N5291 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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