2N5210

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Continuous Collector Current :

100mA

Terminal Position :

BOTTOM

Transition Frequency :

30MHz

Frequency - Transition :

30MHz

Operating Temperature (Max) :

150°C

Emitter Base Voltage (VEBO) :

4.5V

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin/Lead (Sn/Pb)

Published :

2012

Number of Elements :

1

Collector Base Voltage (VCBO) :

50V

DC Current Gain-Min (hFE) :

200

Power Dissipation-Max :

350mW

Gain Bandwidth Product :

30MHz

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

700mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Number of Terminations :

3

Pbfree Code :

No

Transistor Element Material :

SILICON

hFE Min :

200

Collector Emitter Saturation Voltage :

700mV

Max Collector Current :

50mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

O-PBCY-T3

Additional Feature :

LOW NOISE

Qualification Status :

Not Qualified

Package / Case :

TO-92

HTS Code :

8541.21.00.95

RoHS Status :

RoHS Compliant

JESD-609 Code :

e0

ECCN Code :

EAR99

Polarity :

NPN

Mount :

Through Hole

Factory Lead Time :

8 Weeks