2N5210BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

700mV

Radiation Hardening :

No

Transistor Type :

NPN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Length :

5.2mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Number of Pins :

3

hFE Min :

200

Frequency :

30MHz

Weight :

179mg

Published :

2002

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

50nA

Number of Terminations :

3

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

5.33mm

Gain Bandwidth Product :

30MHz

Width :

4.19mm

Base Part Number :

2N5210

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

700mV @ 1mA, 10mA

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

4.5V

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100μA 5V

Voltage - Rated DC :

50V

Transistor Application :

AMPLIFIER

Power Dissipation :

625mW

Mount :

Through Hole

ECCN Code :

EAR99

Packaging :

Bulk

Transition Frequency :

30MHz

Max Power Dissipation :

625mW

Element Configuration :

Single

REACH SVHC :

No SVHC

Current Rating :

100mA

RoHS Status :

RoHS Compliant