2N5210TF
- Mfr.Part #
- 2N5210TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 22,958
- In Stock :
- 22,958
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- LOW NOISE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Frequency - Transition :
- 30MHz
- JESD-30 Code :
- O-PBCY-T3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Power - Max :
- 625mW
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 100mA
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Configuration :
- Single
- Transition Frequency :
- 30MHz
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Datasheets
- 2N5210TF
2N5210TF Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210TF Overview
In this device, the DC current gain is 200 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2N5210TF Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
a transition frequency of 30MHz
2N5210TF Applications
There are a lot of Rochester Electronics, LLC
2N5210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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