2N5210TF
- Mfr.Part #
- 2N5210TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 22,958
- In Stock :
- 22,958
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Surface Mount :
- No
- Transition Frequency :
- 30MHz
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Power - Max :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Qualification Status :
- COMMERCIAL
- Frequency - Transition :
- 30MHz
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Number of Elements :
- 1
- JESD-30 Code :
- O-PBCY-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Additional Feature :
- LOW NOISE
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Finish :
- MATTE TIN
- Datasheets
- 2N5210TF

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210TF Overview
In this device, the DC current gain is 200 @ 100μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 1mA, 10mA.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.
2N5210TF Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
a transition frequency of 30MHz
2N5210TF Applications
There are a lot of Rochester Electronics, LLC
2N5210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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