2N5210TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

625mW

Transition Frequency :

30MHz

Vce Saturation (Max) @ Ib, Ic :

700mV @ 1mA, 10mA

Current - Collector Cutoff (Max) :

50nA ICBO

JESD-609 Code :

e3

Additional Feature :

LOW NOISE

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Collector (Ic) (Max) :

100mA

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

30MHz

JESD-30 Code :

O-PBCY-T3

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Voltage - Collector Emitter Breakdown (Max) :

50V

Configuration :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Transistor Application :

AMPLIFIER

Pin Count :

3

Transistor Type :

NPN

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100μA 5V

Polarity/Channel Type :

NPN

Surface Mount :

No