2N5210TA
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- Mfr.Part #
- 2N5210TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 39,930
- In Stock ：
- 39,930
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 100mA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Length :
- 5.2mm
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Emitter Base Voltage (VEBO) :
- 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Gain Bandwidth Product :
- 30MHz
- Transition Frequency :
- 30MHz
- Base Part Number :
- 2N5210
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 5.33mm
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Frequency :
- 30MHz
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Current Rating :
- 100mA
- Width :
- 4.19mm
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Power Dissipation :
- 625mW
- Published :
- 2002
- Pbfree Code :
- yes
- Max Power Dissipation :
- 625mW
- Datasheets
- 2N5210TA
2N5210TA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5210TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TA Applications
There are a lot of ON Semiconductor
2N5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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