2N5210TA
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- Mfr.Part #
- 2N5210TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 39,930
- In Stock ：
- 39,930
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4.5V
- Weight :
- 240mg
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Collector Emitter Saturation Voltage :
- 700mV
- RoHS Status :
- RoHS Compliant
- Width :
- 4.19mm
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Element Configuration :
- Single
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Length :
- 5.2mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- Number of Pins :
- 3
- hFE Min :
- 200
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 100mA
- Gain Bandwidth Product :
- 30MHz
- Transition Frequency :
- 30MHz
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Power Dissipation :
- 625mW
- Base Part Number :
- 2N5210
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 30MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N5210TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5210TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2N5210TA Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 100mA
a transition frequency of 30MHz
2N5210TA Applications
There are a lot of ON Semiconductor
2N5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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