2N5210TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

4.5V

Lead Free :

Lead Free

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gain Bandwidth Product :

30MHz

Current Rating :

100mA

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Published :

2002

Width :

4.19mm

Factory Lead Time :

6 Weeks

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

50V

Mount :

Through Hole

Terminal Position :

BOTTOM

Base Part Number :

2N5210

Frequency :

30MHz

ECCN Code :

EAR99

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100μA 5V

Transistor Type :

NPN

Transition Frequency :

30MHz

Transistor Application :

AMPLIFIER

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Emitter Saturation Voltage :

700mV

Voltage - Rated DC :

50V

RoHS Status :

RoHS Compliant

Max Breakdown Voltage :

45V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

yes

Packaging :

Tape and Box (TB)

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

50V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

625mW

hFE Min :

200

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

700mV @ 1mA, 10mA

JESD-609 Code :

e3

Weight :

240mg

Height :

5.33mm

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Length :

5.2mm