2N5210_S00Z
- Mfr.Part #
- 2N5210_S00Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 5,842
- In Stock :
- 5,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Base Part Number :
- 2N5210
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 100mA
- Frequency - Transition :
- 30MHz
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N5210_S00Z
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5210_S00Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100μA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 1mA, 10mA.Device displays Collector Emitter Breakdown (50V maximal voltage).
2N5210_S00Z Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
2N5210_S00Z Applications
There are a lot of ON Semiconductor
2N5210_S00Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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