2N5210_D81Z
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- Mfr.Part #
- 2N5210_D81Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92-3
- Stock
- 6,474
- In Stock ：
- 6,474
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-92-3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 625mW
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 30MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2N5210
- Current - Collector (Ic) (Max) :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Published :
- 2002
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N5210_D81Z
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5210_D81Z Overview
This device has a DC current gain of 200 @ 100μA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Product package TO-92-3 comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2N5210_D81Z Features
the DC current gain for this device is 200 @ 100μA 5V
the vce saturation(Max) is 700mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5210_D81Z Applications
There are a lot of ON Semiconductor
2N5210_D81Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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