2N3906T93
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- Mfr.Part #
- 2N3906T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 3,734
- In Stock ：
- 3,734
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector-Base Capacitance-Max :
- 4.5pF
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 250MHz
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 70ns
- Published :
- 1998
- Voltage - Rated DC :
- -40V
- Collector Emitter Voltage (VCEO) :
- 400mV
- JESD-30 Code :
- O-PBCY-T3
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- hFE Min :
- 60
- Element Configuration :
- Single
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 300ns
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2N3906
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- JESD-609 Code :
- e3/e2
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Base Voltage (VCBO) :
- 40V
- Transition Frequency :
- 250MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- TIN/TIN COPPER
- Current - Collector (Ic) (Max) :
- 200mA
- Packaging :
- Tape and Box (TB)
- Current Rating :
- -200mA
- Terminal Position :
- BOTTOM
- VCEsat-Max :
- 0.4 V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- 2N3906T93
PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906T93 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 200mA volts.
2N3906T93 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906T93 Applications
There are a lot of ROHM Semiconductor
2N3906T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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