2N3904T93
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- Mfr.Part #
- 2N3904T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 9,933
- In Stock ：
- 9,933
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 4pF
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Voltage - Rated DC :
- 40V
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 70ns
- Current Rating :
- 200mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Pin Count :
- 3
- Power - Max :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 200mA
- Base Part Number :
- 2N3904
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- TIN/TIN COPPER
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Turn Off Time-Max (toff) :
- 250ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 50nA
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2005
- hFE Min :
- 40
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Datasheets
- 2N3904T93
NPN 150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3904T93 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).300MHz is present in the transition frequency.Maximum collector currents can be below 200mA volts.
2N3904T93 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904T93 Applications
There are a lot of ROHM Semiconductor
2N3904T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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