2N3904T93
- Mfr.Part #
- 2N3904T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 9,933
- In Stock :
- 9,933
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Power - Max :
- 625mW
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 200mA
- HTS Code :
- 8541.21.00.75
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2005
- Turn On Time-Max (ton) :
- 70ns
- Current - Collector Cutoff (Max) :
- 50nA
- Packaging :
- Tape and Box (TB)
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 40
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Terminal Finish :
- TIN/TIN COPPER
- Base Part Number :
- 2N3904
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Turn Off Time-Max (toff) :
- 250ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Pin Count :
- 3
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 200mA
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Collector-Base Capacitance-Max :
- 4pF
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 40V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Datasheets
- 2N3904T93
2N3904T93 Documents

NPN 150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3904T93 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).300MHz is present in the transition frequency.Maximum collector currents can be below 200mA volts.
2N3904T93 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904T93 Applications
There are a lot of ROHM Semiconductor
2N3904T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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