2N3879A
- Mfr.Part #
- 2N3879A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 18,590
- In Stock :
- 18,590
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 400mA, 4A
- Voltage - Collector Emitter Breakdown (Max) :
- 75 V
- Brand :
- Microchip Technology / Atmel
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 7 A
- Subcategory :
- Transistors
- Current - Collector Cutoff (Max) :
- 25mA (ICBO)
- Package / Case :
- TO-213AA, TO-66-2
- Package :
- Bulk
- Product Status :
- Active
- Power - Max :
- 35 W
- Manufacturer :
- Microchip
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-66 (TO-213AA)
- Series :
- -
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A, 5V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Datasheets
- 2N3879A
NPN -65°C ~ 200°C (TJ) 25mA (ICBO) TO-213AA, TO-66-2 Through Hole
2N3879A Overview
DC current gain in this device equals 20 @ 4A, 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 400mA, 4A.Product comes in TO-66 (TO-213AA) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3879A Features
the DC current gain for this device is 20 @ 4A, 5V
the vce saturation(Max) is 1.2V @ 400mA, 4A
the supplier device package of TO-66 (TO-213AA)
2N3879A Applications
There are a lot of Microchip Technology
2N3879A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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