2N3810

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Pin Count :

8

Max Power Dissipation :

350mW

Transistor Application :

AMPLIFIER

Terminal Finish :

TIN LEAD

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

RoHS Status :

Non-RoHS Compliant

Max Collector Current :

50mA

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

60V

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

8

Number of Elements :

2

Terminal Position :

BOTTOM

Radiation Hardening :

No

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-MBCY-W8

Factory Lead Time :

12 Weeks

Current - Collector Cutoff (Max) :

10μA ICBO

Operating Temperature :

-65°C~200°C TJ

Package / Case :

TO-78-6 Metal Can

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Terminal Form :

Wire

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Pbfree Code :

No

ECCN Code :

EAR99

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Collector Emitter Breakdown Voltage :

60V

Transition Frequency :

100MHz

Power Dissipation :

350mW