2N3810U

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Number of Terminations :

8

JESD-30 Code :

O-MBCY-W8

Factory Lead Time :

12 Weeks

Power Dissipation :

350mW

Collector Emitter Voltage (VCEO) :

60V

Collector Emitter Breakdown Voltage :

60V

Terminal Position :

BOTTOM

Package / Case :

TO-78-6 Metal Can

Transistor Type :

2 PNP (Dual)

Polarity :

PNP

RoHS Status :

Non-RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mount :

Surface Mount, Through Hole

Radiation Hardening :

No

Max Collector Current :

50mA

Number of Pins :

6

Pbfree Code :

No

Current - Collector Cutoff (Max) :

10μA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

ECCN Code :

EAR99

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-65°C~200°C TJ

Number of Elements :

2

Terminal Form :

Wire

Max Power Dissipation :

350mW

Published :

2007

JESD-609 Code :

e0

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)