2N3810

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Number of Pins :

6

Package / Case :

TO-78-6 Metal Can

Polarity :

PNP

RoHS Status :

Non-RoHS Compliant

Max Collector Current :

50mA

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

No

Max Power Dissipation :

350mW

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

JESD-609 Code :

e0

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 1mA 5V

Transistor Type :

2 PNP (Dual)

Power Dissipation :

350mW

Terminal Finish :

TIN LEAD

Mount :

Through Hole

JESD-30 Code :

O-MBCY-W8

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Factory Lead Time :

12 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Pin Count :

8

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Number of Terminations :

8

Packaging :

Bulk

Terminal Form :

Wire

Operating Temperature :

-65°C~200°C TJ