2N3859A

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Mfr.Part #
2N3859A
Manufacturer
Fairchild Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 60V 0.5A TO92-3
Stock
43,663
In Stock :
43,663

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
60V
Number of Elements :
1
Surface Mount :
No
Transistor Type :
NPN
Packaging :
Bulk
Transistor Application :
SWITCHING
Power - Max :
625mW
ECCN Code :
EAR99
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Polarity/Channel Type :
NPN
Transition Frequency :
90MHz
HTS Code :
8541.21.00.95
Current - Collector Cutoff (Max) :
500nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1mA 1V
Reach Compliance Code :
Unknown
Operating Temperature :
-55°C~150°C TJ
Current - Collector (Ic) (Max) :
500mA
Terminal Position :
BOTTOM
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
JESD-30 Code :
O-PBCY-T3
Mounting Type :
Through Hole
Configuration :
Single
Frequency - Transition :
250MHz
Datasheets
2N3859A
Introducing Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N3859A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, 2N3859A pinout, 2N3859A datasheet PDF, 2N3859A amp .Beyond Transistors - Bipolar (BJT) - Single Fairchild Semiconductor 2N3859A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor 2N3859A


NPN -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N3859A Overview


DC current gain in this device equals 100 @ 1mA 1V, which is the ratio of the base current to the collector current.As a result, the part has a transition frequency of 90MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N3859A Features


the DC current gain for this device is 100 @ 1mA 1V
a transition frequency of 90MHz


2N3859A Applications


There are a lot of Rochester Electronics, LLC
2N3859A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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