2N3848
- Mfr.Part #
- 2N3848
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 31,130
- In Stock :
- 31,130
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-63
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 20 A
- Technology :
- Si
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Power - Max :
- 150 W
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Current - Collector Cutoff (Max) :
- -
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- -
- Package / Case :
- TO-211MB, TO-63-4, Stud
- Mounting Type :
- Stud Mount
- Series :
- -
- Transistor Type :
- PNP
- Transistor Polarity :
- NPN
- Datasheets
- 2N3848
PNP -65°C ~ 200°C (TJ) - TO-211MB, TO-63-4, Stud Stud Mount
2N3848 Overview
In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to -.Product comes in the supplier's device package TO-63.There is a 200 V maximal voltage in the device due to collector-emitter breakdown.
2N3848 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63
2N3848 Applications
There are a lot of Microchip Technology
2N3848 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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