2N3811

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e0

Mount :

Through Hole

Power - Max :

350mW

Number of Elements :

2

Collector Base Voltage (VCBO) :

60V

Max Collector Current :

50mA

Current - Collector Cutoff (Max) :

10μA ICBO

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

JESD-30 Code :

O-MBCY-W8

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Terminal Position :

BOTTOM

Published :

2007

Radiation Hardening :

No

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

6

Max Power Dissipation :

350mW

Terminal Form :

Wire

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

250mV

HTS Code :

8541.21.00.95

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Through Hole

Configuration :

SEPARATE, 2 ELEMENTS

Pin Count :

8

Transition Frequency :

100MHz

Transistor Type :

2 PNP (Dual)

Number of Terminations :

8

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

250mV @ 100μA, 1mA

Package / Case :

TO-78-6 Metal Can