2N3499U4/TR
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- Mfr.Part #
- 2N3499U4/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 42,919
- In Stock ：
- 42,919
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Supplier Device Package :
- U4
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Current - Collector (Ic) (Max) :
- 500 mA
- Package :
- Tape and Reel (TR)
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Series :
- -
- Power - Max :
- 1 W
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Brand :
- Microchip Technology
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Product Status :
- Active
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- 2N3499U4/TR
NPN -65°C ~ 200°C (TJ) 50nA (ICBO) 3-SMD, No Lead Surface Mount
2N3499U4/TR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3499U4/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of U4
2N3499U4/TR Applications
There are a lot of Microchip Technology
2N3499U4/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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