2N3416_D26Z
- Mfr.Part #
- 2N3416_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 24,239
- In Stock :
- 24,239
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package :
- TO-92-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Current - Collector (Ic) (Max) :
- 500mA
- Base Part Number :
- 2N3416
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 2mA 4.5V
- Power - Max :
- 625mW
- Datasheets
- 2N3416_D26Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3416_D26Z Overview
In this device, the DC current gain is 75 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 3mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2N3416_D26Z Features
the DC current gain for this device is 75 @ 2mA 4.5V
the vce saturation(Max) is 300mV @ 3mA, 50mA
the supplier device package of TO-92-3
2N3416_D26Z Applications
There are a lot of ON Semiconductor
2N3416_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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