2N3417
- Mfr.Part #
- 2N3417
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO92-3
- Stock
- 64,563
- In Stock :
- 64,563
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- LOW NOISE
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation-Max :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 5V
- hFE Min :
- 180
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Series :
- --
- Frequency - Transition :
- --
- Transistor Type :
- NPN
- Min Operating Temperature :
- -65°C
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e0
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Number of Elements :
- 1
- Max Collector Current :
- 100nA
- JESD-30 Code :
- O-PBCY-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150°C
- DC Current Gain-Min (hFE) :
- 180
- Supplier Device Package :
- TO-92
- Pin Count :
- 3
- Packaging :
- Bulk
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Collector Current :
- 450mA
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 300mV
- Vce Saturation (Max) @ Ib, Ic :
- --
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2012
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA, 4.5V
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.95
- Package / Case :
- TO-92
- Polarity :
- NPN
- Datasheets
- 2N3417

NPN -65°C ~ 150°C (TJ) 100nA (ICBO) 1 Elements 3 Terminations TO-92 Bulk Through Hole
2N3417 Overview
This device has a DC current gain of 180 @ 2mA, 4.5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 450mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.The maximum collector current is 100nA volts.
2N3417 Features
the DC current gain for this device is 180 @ 2mA, 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is --
the emitter base voltage is kept at 5V
the supplier device package of TO-92
2N3417 Applications
There are a lot of Central Semiconductor
2N3417 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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