2N3415_D75Z

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Mfr.Part #
2N3415_D75Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 25V 0.5A TO92-3
Stock
18,316
In Stock :
18,316

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
hFE Min :
180
Current - Collector Cutoff (Max) :
100nA ICBO
Lead Free :
Lead Free
Max Collector Current :
500mA
Mount :
Through Hole
Element Configuration :
Single
Collector Base Voltage (VCBO) :
25V
Collector Emitter Breakdown Voltage :
25V
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 2mA 4.5V
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Number of Pins :
3
Base Part Number :
2N3415
Current Rating :
500mA
Max Power Dissipation :
625mW
Vce Saturation (Max) @ Ib, Ic :
300mV @ 3mA, 50mA
Collector Emitter Voltage (VCEO) :
25V
Voltage - Rated DC :
25V
Collector Emitter Saturation Voltage :
300mV
Emitter Base Voltage (VEBO) :
5V
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Packaging :
Tape and Box (TB)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheets
2N3415_D75Z
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3415_D75Z from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:2N3415, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), 2N3415_D75Z pinout, 2N3415_D75Z datasheet PDF, 2N3415_D75Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3415_D75Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3415_D75Z


NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N3415_D75Z Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 4.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 3mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.

2N3415_D75Z Features


the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA


2N3415_D75Z Applications


There are a lot of ON Semiconductor
2N3415_D75Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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