2N3415_D75Z
- Mfr.Part #
- 2N3415_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.5A TO92-3
- Stock
- 18,316
- In Stock :
- 18,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 180
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Mount :
- Through Hole
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 4.5V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Base Part Number :
- 2N3415
- Current Rating :
- 500mA
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 3mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 25V
- Voltage - Rated DC :
- 25V
- Collector Emitter Saturation Voltage :
- 300mV
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- 2N3415_D75Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3415_D75Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 4.5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 3mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 500mA volts.
2N3415_D75Z Features
the DC current gain for this device is 180 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
2N3415_D75Z Applications
There are a lot of ON Semiconductor
2N3415_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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