2N3498U4/TR
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- Mfr.Part #
- 2N3498U4/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 39,630
- In Stock ：
- 39,630
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Transistor Type :
- NPN
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 500 mA
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Manufacturer :
- Microchip
- Package / Case :
- 3-SMD, No Lead
- Package :
- Tape and Reel (TR)
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Supplier Device Package :
- U4
- Series :
- -
- Brand :
- Microchip Technology
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 1 W
- Mounting Type :
- Surface Mount
- Datasheets
- 2N3498U4/TR
NPN -65°C ~ 200°C (TJ) 50nA (ICBO) 3-SMD, No Lead Surface Mount
2N3498U4/TR Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.Product comes in the supplier's device package U4.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.
2N3498U4/TR Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of U4
2N3498U4/TR Applications
There are a lot of Microchip Technology
2N3498U4/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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