2N3494
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- Mfr.Part #
- 2N3494
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 12,951
- In Stock ：
- 12,951
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5AA
- Frequency - Transition :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 100 mA
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Brand :
- Microchip Technology / Atmel
- Package :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Product Category :
- Bipolar Transistors - BJT
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Series :
- -
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 50mA, 10V
- Power - Max :
- 600 mW
- Datasheets
- 2N3494
PNP -65°C ~ 200°C (TJ) 100nA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
2N3494 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 50mA, 10V.When VCE saturation is 300mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-5AA contains the product.The device has a 80 V maximal voltage - Collector Emitter Breakdown.
2N3494 Features
the DC current gain for this device is 40 @ 50mA, 10V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-5AA
2N3494 Applications
There are a lot of Microchip Technology
2N3494 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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