2N3488
- Mfr.Part #
- 2N3488
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 35,704
- In Stock :
- 35,704
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MUPM-D3
- Package :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Vce Saturation (Max) @ Ib, Ic :
- -
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 7 A
- Collector-Emitter Voltage-Max :
- 80 V
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- -
- Reach Compliance Code :
- Compliant
- Manufacturer :
- Microchip
- Case Connection :
- COLLECTOR
- JEDEC-95 Code :
- TO-61
- VCEsat-Max :
- 1.2 V
- Number of Terminals :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Brand :
- Microchip Technology
- Package Shape :
- Round
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- -
- Product Status :
- Active
- Transistor Polarity :
- NPN
- Configuration :
- Single
- DC Current Gain-Min (hFE) :
- 20
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Collector Current-Max (IC) :
- 10 A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Technology :
- Si
- Terminal Form :
- Solder Lug
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Mounting Type :
- Stud Mount
- Power - Max :
- 115 W
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Power Dissipation-Max (Abs) :
- 117 W
- Surface Mount :
- No
- Number of Elements :
- 1
- Supplier Device Package :
- TO-61
- Terminal Position :
- UPPER
- Datasheets
- 2N3488
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N3488 Overview
This device has a DC current gain of -, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-61.Maximum collector-emitter voltage can be set to 80 V.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.
2N3488 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-61
2N3488 Applications
There are a lot of Microchip Technology
2N3488 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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