2N3485A
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- Mfr.Part #
- 2N3485A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO46
- Stock
- 44,275
- In Stock ：
- 44,275
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Transition Frequency :
- 200MHz
- Factory Lead Time :
- 22 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power Dissipation-Max (Abs) :
- 0.4W
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-MBCY-W3
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Power - Max :
- 400mW
- Pbfree Code :
- No
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN LEAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- JESD-609 Code :
- e0
- Published :
- 2002
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Datasheets
- 2N3485A
PNP -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-206AB, TO-46-3 Metal Can Bulk Through Hole
2N3485A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.The part has a transition frequency of 200MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
2N3485A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz
2N3485A Applications
There are a lot of Microsemi Corporation
2N3485A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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