2N3442G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

200mA

Published :

2005

Case Connection :

COLLECTOR

Packaging :

Tray

Collector Emitter Breakdown Voltage :

140V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

117W

Gain Bandwidth Product :

80MHz

Current Rating :

10A

Weight :

4.535924g

Surface Mount :

No

Pbfree Code :

yes

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3A 4V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

5V @ 2A, 10A

JESD-609 Code :

e3

Transistor Type :

NPN

Voltage - Rated DC :

140V

Collector Base Voltage (VCBO) :

160V

Collector Emitter Voltage (VCEO) :

140V

Collector Emitter Saturation Voltage :

5V

Number of Terminations :

2

Frequency :

80MHz

Emitter Base Voltage (VEBO) :

7V

Operating Temperature :

-65°C~200°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

20

Length :

39.37mm

Terminal Form :

PIN/PEG

Element Configuration :

Single

Height :

8.51mm

Transistor Element Material :

SILICON

Package / Case :

TO-204AA, TO-3

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Max Collector Current :

10A

Number of Pins :

2

Transition Frequency :

0.08MHz

Base Part Number :

2N3442

Number of Elements :

1

Pin Count :

2

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Width :

26.67mm

Frequency - Transition :

80kHz

ECCN Code :

EAR99

Power Dissipation :

117W

Radiation Hardening :

No