2N3440L
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- Mfr.Part #
- 2N3440L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO5
- Stock
- 6,454
- In Stock ：
- 6,454
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 800mW
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Current - Collector Cutoff (Max) :
- 2µA
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 7V
- Qualification Status :
- Not Qualified
- Terminal Form :
- Wire
- Collector Emitter Breakdown Voltage :
- 250V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Factory Lead Time :
- 12 Weeks
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 300V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN LEAD
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e0
- Power Dissipation :
- 800mW
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Pin Count :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Datasheets
- 2N3440L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N3440L Overview
DC current gain in this device equals 40 @ 20mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3440L Applications
There are a lot of Microsemi Corporation
2N3440L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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