2N3440

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Operating Temperature :

-65°C~200°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA 10V

Max Collector Current :

1A

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Power Dissipation :

800mW

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Max Power Dissipation :

800mW

Max Operating Temperature :

200°C

Factory Lead Time :

12 Weeks

Voltage - Collector Emitter Breakdown (Max) :

250V

Power - Max :

800mW

Collector Emitter Breakdown Voltage :

250V

Current - Collector Cutoff (Max) :

2µA

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Emitter Base Voltage (VEBO) :

7V

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

1A

Number of Elements :

1

Package / Case :

TO-205AD, TO-39-3 Metal Can

Number of Pins :

3

Polarity :

NPN

RoHS Status :

Non-RoHS Compliant

Collector Emitter Voltage (VCEO) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

300V

Mount :

Through Hole

Supplier Device Package :

TO-39 (TO-205AD)