2N3439UA

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Mfr.Part #
2N3439UA
Manufacturer
Microchip Technology
Package / Case
4-SMD, No Lead
Datasheet
Download
Description
TRANS NPN 350V 1A
Stock
8,881
In Stock :
8,881

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
4-SMD, No Lead
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
350V
Operating Temperature :
-65°C~200°C TJ
Number of Pins :
4
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
No
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 20mA 10V
Max Collector Current :
1A
Mount :
Surface Mount
Radiation Hardening :
No
ECCN Code :
EAR99
Mounting Type :
Surface Mount
JESD-609 Code :
e4
Terminal Position :
Dual
Power Dissipation :
800mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 4mA, 50mA
JESD-30 Code :
R-XDSO-N3
Transistor Element Material :
SILICON
Max Power Dissipation :
800mW
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Time@Peak Reflow Temperature-Max (s) :
30
Configuration :
Single
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
2µA
Terminal Finish :
Gold Over Nickel
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
350V
Number of Terminations :
3
Collector Base Voltage (VCBO) :
450V
Emitter Base Voltage (VEBO) :
7V
Transistor Type :
NPN
Packaging :
Bulk
Number of Elements :
1
Factory Lead Time :
12 Weeks
Datasheets
2N3439UA
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3439UA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:4-SMD, No Lead, Operating Temperature:-65°C~200°C TJ, Number of Pins:4, Mounting Type:Surface Mount, Number of Terminations:3, 2N3439UA pinout, 2N3439UA datasheet PDF, 2N3439UA amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3439UA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3439UA


NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN 4-SMD, No Lead Bulk Surface Mount

2N3439UA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.

2N3439UA Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V


2N3439UA Applications


There are a lot of Microsemi Corporation
2N3439UA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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