2N3439UA
- Mfr.Part #
- 2N3439UA
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A
- Stock
- 8,881
- In Stock :
- 8,881
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 4-SMD, No Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e4
- Terminal Position :
- Dual
- Power Dissipation :
- 800mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- JESD-30 Code :
- R-XDSO-N3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 800mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 2µA
- Terminal Finish :
- Gold Over Nickel
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 350V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 450V
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Datasheets
- 2N3439UA

NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN 4-SMD, No Lead Bulk Surface Mount
2N3439UA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 1A volts.
2N3439UA Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
2N3439UA Applications
There are a lot of Microsemi Corporation
2N3439UA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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