2N3439U4/TR
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- Mfr.Part #
- 2N3439U4/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 5,134
- In Stock ：
- 5,134
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Current - Collector Cutoff (Max) :
- 2µA
- Product Status :
- Active
- Subcategory :
- Transistors
- Mounting Type :
- Surface Mount
- Brand :
- Microchip Technology
- Power - Max :
- 800 mW
- Current - Collector (Ic) (Max) :
- 1 A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Package / Case :
- 3-SMD, No Lead
- Package :
- Tape and Reel (TR)
- Product Category :
- Bipolar Transistors - BJT
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Supplier Device Package :
- U4
- Series :
- -
- Transistor Type :
- NPN
- Datasheets
- 2N3439U4/TR
NPN -65°C ~ 200°C (TJ) 2μA 3-SMD, No Lead Surface Mount
2N3439U4/TR Overview
DC current gain in this device equals 40 @ 20mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.Product comes in U4 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3439U4/TR Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of U4
2N3439U4/TR Applications
There are a lot of Microchip Technology
2N3439U4/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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