2N3439U4
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- Mfr.Part #
- 2N3439U4
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A U4
- Stock
- 45,454
- In Stock ：
- 45,454
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 12 Weeks
- Current - Collector Cutoff (Max) :
- 2µA
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Supplier Device Package :
- U4
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 800mW
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Tray
- Package / Case :
- 3-SMD, No Lead
- Mounting Type :
- Surface Mount
- Datasheets
- 2N3439U4
NPN -65°C~200°C TJ 2μA 3-SMD, No Lead Tray Surface Mount
2N3439U4 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 350V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3439U4 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of U4
2N3439U4 Applications
There are a lot of Microsemi Corporation
2N3439U4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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